BC856BDW1T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Collector Emitter Voltage (VCEO) :

65V

Width :

1.25mm

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

100MHz

Max Power Dissipation :

380mW

Length :

2.08mm

Transition Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Radiation Hardening :

No

Number of Terminations :

6

Emitter Base Voltage (VEBO) :

-5V

Factory Lead Time :

8 Weeks

Polarity :

PNP

Current - Collector Cutoff (Max) :

15nA ICBO

Current Rating :

-100mA

Collector Emitter Saturation Voltage :

-650mV

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Type :

2 PNP (Dual)

Voltage - Rated DC :

-65V

Power Dissipation :

380mW

Number of Pins :

6

Published :

2005

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Elements :

2

Terminal Finish :

Tin (Sn)

Transistor Application :

AMPLIFIER

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

65V

Height :

950μm

Max Breakdown Voltage :

65V

Collector Base Voltage (VCBO) :

80V

Lead Free :

Lead Free

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Reference Standard :

AEC-Q101

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

hFE Min :

220

Terminal Form :

Gull wing