BC856BDW1T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Pins :

6

Transistor Application :

AMPLIFIER

Max Breakdown Voltage :

65V

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

65V

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

-5V

Max Collector Current :

100mA

Transition Frequency :

100MHz

Pbfree Code :

yes

JESD-609 Code :

e3

Power Dissipation :

380mW

Collector Emitter Saturation Voltage :

-650mV

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Transistor Type :

2 PNP (Dual)

Lead Free :

Lead Free

Current Rating :

-100mA

Pin Count :

6

Element Configuration :

Dual

Terminal Form :

Gull wing

Width :

1.25mm

Published :

2005

Frequency :

100MHz

Max Power Dissipation :

380mW

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Polarity :

PNP

Factory Lead Time :

8 Weeks

hFE Min :

220

Number of Elements :

2

Height :

950μm

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

65V

Gain Bandwidth Product :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2.08mm

Voltage - Rated DC :

-65V

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Collector Base Voltage (VCBO) :

80V

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

15nA ICBO

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6