BC856BDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

hFE Min :

220

Collector Emitter Saturation Voltage :

-650mV

Polarity :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Max Collector Current :

100mA

Factory Lead Time :

8 Weeks

Frequency :

100MHz

Collector Emitter Breakdown Voltage :

65V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Terminations :

6

Current Rating :

-100mA

Element Configuration :

Dual

Width :

1.25mm

Transition Frequency :

100MHz

Radiation Hardening :

No

Terminal Form :

Gull wing

Height :

900μm

Collector Base Voltage (VCBO) :

80V

Published :

2005

Mounting Type :

Surface Mount

Max Power Dissipation :

380mW

JESD-609 Code :

e3

Transistor Type :

2 PNP (Dual)

Gain Bandwidth Product :

100MHz

REACH SVHC :

No SVHC

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Peak Reflow Temperature (Cel) :

260

Length :

2mm

Collector Emitter Voltage (VCEO) :

65V

Voltage - Rated DC :

-65V

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Number of Elements :

2

Power Dissipation :

380mW

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Max Breakdown Voltage :

65V

Current - Collector Cutoff (Max) :

15nA ICBO

Lead Free :

Lead Free

Number of Pins :

6

Package / Case :

6-TSSOP, SC-88, SOT-363