BC856BDW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Polarity :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Transistor Type :

2 PNP (Dual)

Contact Plating :

Tin

Height :

900μm

Current Rating :

-100mA

hFE Min :

220

REACH SVHC :

No SVHC

Max Collector Current :

100mA

Terminal Form :

Gull wing

Length :

2mm

JESD-609 Code :

e3

Transition Frequency :

100MHz

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power Dissipation :

380mW

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Collector Emitter Voltage (VCEO) :

65V

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

15nA ICBO

Frequency :

100MHz

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

65V

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Elements :

2

Published :

2005

RoHS Status :

ROHS3 Compliant

Width :

1.25mm

Surface Mount :

yes

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

80V

Collector Emitter Saturation Voltage :

-650mV

Pbfree Code :

yes

Pin Count :

6

Number of Terminations :

6

Number of Pins :

6

Emitter Base Voltage (VEBO) :

5V

Element Configuration :

Dual

Max Power Dissipation :

380mW

Voltage - Rated DC :

-65V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

100MHz

Transistor Element Material :

SILICON

Max Breakdown Voltage :

65V

Transistor Application :

AMPLIFIER