BC856B

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

-65V

Collector Emitter Voltage (VCEO) :

-65V

Height :

1.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

-250mV

Element Configuration :

Single

ECCN Code :

EAR99

Transition Frequency :

200MHz

Weight :

7.994566mg

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

19 Weeks

Pin Count :

3

Lead Free :

Lead Free

Pbfree Code :

yes

Termination :

SMD/SMT

Radiation Hardening :

No

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

-5V

hFE Min :

220

Polarity/Channel Type :

PNP

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

15nA

REACH SVHC :

No SVHC

Operating Temperature :

-65°C~150°C TJ

Base Part Number :

BC856B

Power Dissipation :

310mW

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Gain Bandwidth Product :

200MHz

Max Collector Current :

-100mA

Terminal Form :

Gull wing

Number of Terminations :

3

Max Breakdown Voltage :

45V

Transistor Type :

PNP

Width :

1.4mm

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Power Dissipation :

300mW

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Published :

2005

Contact Plating :

Tin

Length :

3.05mm

Frequency :

200MHz

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

-80V

Voltage - Collector Emitter Breakdown (Max) :

65V