BC856AW,135
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- Mfr.Part #
- BC856AW,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA BC856AW - SMALL SIGNAL
- Stock
- 18,296
- In Stock ：
- 18,296
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 200mW
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Collector-Base Capacitance-Max :
- 5pF
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 65V
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Base Part Number :
- BC856
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- SC-70, SOT-323
- Max Power Dissipation :
- 200mW
- Series :
- Automotive, AEC-Q101
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 65V
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 100MHz
- Datasheets
- BC856AW,135
BC856AW,135 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856AW,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC856AW,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856AW,135 Applications
There are a lot of Nexperia USA Inc.
BC856AW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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