BC856AW,135
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- Mfr.Part #
- BC856AW,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA BC856AW - SMALL SIGNAL
- Stock
- 18,296
- In Stock ：
- 18,296
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Series :
- Automotive, AEC-Q101
- Contact Plating :
- Tin
- Max Power Dissipation :
- 200mW
- Published :
- 2009
- Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- Power Dissipation :
- 200mW
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Base Part Number :
- BC856
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 65V
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Element Material :
- SILICON
- Package / Case :
- SC-70, SOT-323
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Collector-Base Capacitance-Max :
- 5pF
- Collector Emitter Breakdown Voltage :
- 65V
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Transition Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Datasheets
- BC856AW,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856AW,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC856AW,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856AW,135 Applications
There are a lot of Nexperia USA Inc.
BC856AW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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