BC856AW,135
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- Mfr.Part #
- BC856AW,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT323
- Stock
- 18,296
- In Stock ：
- 18,296
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 80V
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Published :
- 2009
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 65V
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 65V
- Base Part Number :
- BC856
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Collector-Base Capacitance-Max :
- 5pF
- Contact Plating :
- Tin
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Transition Frequency :
- 100MHz
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Power Dissipation :
- 200mW
- Package / Case :
- SC-70, SOT-323
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BC856AW,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856AW,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC856AW,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856AW,135 Applications
There are a lot of Nexperia USA Inc.
BC856AW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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