BC856AW,115
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- Mfr.Part #
- BC856AW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT323
- Stock
- 1,641
- In Stock ：
- 1,641
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 65V
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Factory Lead Time :
- 4 Weeks
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 200mW
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Package / Case :
- SC-70, SOT-323
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Breakdown Voltage :
- 65V
- Radiation Hardening :
- No
- Power Dissipation :
- 200mW
- Published :
- 2009
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 65V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Base Part Number :
- BC856
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Collector-Base Capacitance-Max :
- 5pF
- Datasheets
- BC856AW,115
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856AW,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 125 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 65V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC856AW,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856AW,115 Applications
There are a lot of Nexperia USA Inc.
BC856AW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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