BC856AW,115
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- Mfr.Part #
- BC856AW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT323
- Stock
- 1,641
- In Stock ：
- 1,641
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 200mW
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Breakdown Voltage :
- 65V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Series :
- Automotive, AEC-Q101
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 65V
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Collector-Base Capacitance-Max :
- 5pF
- Collector Emitter Voltage (VCEO) :
- 65V
- Number of Terminations :
- 3
- Base Part Number :
- BC856
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Power Dissipation :
- 200mW
- Datasheets
- BC856AW,115
BC856AW,115 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856AW,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 125 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 65V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC856AW,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856AW,115 Applications
There are a lot of Nexperia USA Inc.
BC856AW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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