BC856AS-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Breakdown Voltage :

65V

Mount :

Surface Mount

Max Collector Current :

100mA

Length :

2.2mm

Transistor Type :

2 PNP (Dual)

Pbfree Code :

yes

Max Breakdown Voltage :

65V

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

200mW

Collector Emitter Voltage (VCEO) :

65V

Emitter Base Voltage (VEBO) :

5V

Pin Count :

6

Number of Elements :

2

Width :

1.35mm

Number of Terminations :

6

Factory Lead Time :

15 Weeks

Gain Bandwidth Product :

100MHz

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Base Part Number :

BC856AS

Height :

1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

-250mV

Number of Pins :

6

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

hFE Min :

125

Operating Temperature :

-65°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

125 @ 2mA 5V

Package / Case :

6-TSSOP, SC-88, SOT-363

Element Configuration :

Dual

Collector Base Voltage (VCBO) :

80V

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

15nA

Mounting Type :

Surface Mount

Contact Plating :

Tin

JESD-609 Code :

e3

Power Dissipation :

200mW

Weight :

6.010099mg

Lead Free :

Lead Free

Published :

2007

Frequency :

100MHz

Transition Frequency :

100MHz

Transistor Application :

SWITCHING

Radiation Hardening :

No

Polarity :

PNP