BC856AS-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

200mW

Max Breakdown Voltage :

65V

Length :

2.2mm

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Gain Bandwidth Product :

100MHz

Weight :

6.010099mg

Height :

1mm

Number of Terminations :

6

Polarity :

PNP

ECCN Code :

EAR99

Max Collector Current :

100mA

Width :

1.35mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

125 @ 2mA 5V

Max Power Dissipation :

200mW

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

65V

Package / Case :

6-TSSOP, SC-88, SOT-363

Base Part Number :

BC856AS

Pbfree Code :

yes

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

80V

Transistor Type :

2 PNP (Dual)

Factory Lead Time :

15 Weeks

Operating Temperature :

-65°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Collector Emitter Saturation Voltage :

-250mV

Radiation Hardening :

No

hFE Min :

125

Collector Emitter Breakdown Voltage :

65V

Pin Count :

6

Transition Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Current - Collector Cutoff (Max) :

15nA

Lead Free :

Lead Free

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Published :

2007

Number of Elements :

2

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Frequency :

100MHz