BC856AQBZ
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- Mfr.Part #
- BC856AQBZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR IN DFN PACK
- Stock
- 5,000
- In Stock ：
- 5,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C (TJ)
- Supplier Device Package :
- DFN1110D-3
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount, Wettable Flank
- Package / Case :
- 3-XDFN Exposed Pad
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA, 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 65 V
- Frequency - Transition :
- 100MHz
- Package :
- Digi-Reel?
- Current - Collector (Ic) (Max) :
- 100 mA
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Power - Max :
- 340 mW
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- 15nA (ICBO)
- Series :
- BC856xQB
- Datasheets
- BC856AQBZ
PNP 150°C (TJ) 15nA (ICBO) 3-XDFN Exposed Pad Surface Mount, Wettable Flank
BC856AQBZ Overview
This device has a DC current gain of 125 @ 2mA, 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Product package DFN1110D-3 comes from the supplier.Collector Emitter Breakdown occurs at 65 VV - Maximum voltage.
BC856AQBZ Features
the DC current gain for this device is 125 @ 2mA, 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the supplier device package of DFN1110D-3
BC856AQBZ Applications
There are a lot of Nexperia USA Inc.
BC856AQBZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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