BC856ALT1
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- Mfr.Part #
- BC856ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 100MA SOT23
- Stock
- 41,476
- In Stock ：
- 41,476
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Power Dissipation :
- 300mW
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Cut Tape (CT)
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 65V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 80V
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 65V
- Transistor Type :
- PNP
- Height :
- 940μm
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Voltage - Rated DC :
- -65V
- Collector Emitter Voltage (VCEO) :
- 65V
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- -650mV
- Width :
- 1.3mm
- Length :
- 2.9mm
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Current Rating :
- -100mA
- Number of Terminations :
- 3
- Factory Lead Time :
- 5 Weeks
- Published :
- 2005
- hFE Min :
- 125
- Pin Count :
- 3
- Datasheets
- BC856ALT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC856ALT1G Overview
DC current gain in this device equals 125 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 65V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC856ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856ALT1G Applications
There are a lot of ON Semiconductor
BC856ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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