BC856ALT1
- Mfr.Part #
- BC856ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 100MA SOT23
- Stock
- 41,476
- In Stock :
- 41,476
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 300mW
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Breakdown Voltage :
- 65V
- Published :
- 2005
- Power Dissipation :
- 300mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Current Rating :
- -100mA
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Height :
- 940μm
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- -65V
- Length :
- 2.9mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Transistor Application :
- SWITCHING
- Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Packaging :
- Cut Tape (CT)
- Collector Emitter Saturation Voltage :
- -650mV
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- Surface Mount :
- yes
- hFE Min :
- 125
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 65V
- REACH SVHC :
- No SVHC
- Width :
- 1.3mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 5 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 65V
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Datasheets
- BC856ALT1
BC856ALT1 Documents

PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC856ALT1G Overview
DC current gain in this device equals 125 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 65V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC856ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856ALT1G Applications
There are a lot of ON Semiconductor
BC856ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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