BC856A-7-F
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- Mfr.Part #
- BC856A-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT23-3
- Stock
- 34,409
- In Stock ：
- 34,409
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Weight :
- 7.994566mg
- Base Part Number :
- BC856A
- Current Rating :
- -100mA
- Collector Base Voltage (VCBO) :
- 80V
- Power Dissipation :
- 350mW
- Factory Lead Time :
- 19 Weeks
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 65V
- Collector Emitter Saturation Voltage :
- -650mV
- Mounting Type :
- Surface Mount
- Length :
- 3.05mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 100mA
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 65V
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Rated DC :
- -65V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Transition Frequency :
- 200MHz
- Mount :
- Surface Mount
- Max Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 1mm
- Published :
- 2005
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- Width :
- 1.4mm
- Gain Bandwidth Product :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Max Breakdown Voltage :
- 65V
- Current - Collector Cutoff (Max) :
- 15nA
- Frequency :
- 200MHz
- Power - Max :
- 300mW
- Datasheets
- BC856A-7-F
BC856A-7-F Documents
PNP -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC856A-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 65V volts.During maximum operation, collector current can be as low as 100mA volts.
BC856A-7-F Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 200MHz
BC856A-7-F Applications
There are a lot of Diodes Incorporated
BC856A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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