BC856,215
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- Mfr.Part #
- BC856,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A TO236AB
- Stock
- 2,404
- In Stock ：
- 2,404
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1mm
- Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 65V
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 250mW
- Mounting Type :
- Surface Mount
- Length :
- 3mm
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 650mV
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 80V
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- BC856
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Breakdown Voltage :
- 65V
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 250mW
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Published :
- 2001
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Gain Bandwidth Product :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 65V
- Width :
- 1.4mm
- Datasheets
- BC856,215
BC856,215 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC856,215 Overview
DC current gain in this device equals 125 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 65V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC856,215 Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856,215 Applications
There are a lot of Nexperia USA Inc.
BC856,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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