BC856,215
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- Mfr.Part #
- BC856,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A TO236AB
- Stock
- 2,404
- In Stock ：
- 2,404
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 65V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Length :
- 3mm
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Height :
- 1mm
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Published :
- 2001
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 1.4mm
- Collector Base Voltage (VCBO) :
- 80V
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 250mW
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 650mV
- Max Breakdown Voltage :
- 65V
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 65V
- Max Power Dissipation :
- 250mW
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 100MHz
- Base Part Number :
- BC856
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 4 Weeks
- Series :
- Automotive, AEC-Q101
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Datasheets
- BC856,215
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC856,215 Overview
DC current gain in this device equals 125 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 65V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC856,215 Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856,215 Applications
There are a lot of Nexperia USA Inc.
BC856,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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