BC850CW,135
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- Mfr.Part #
- BC850CW,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT323
- Stock
- 342,547
- In Stock ：
- 342,547
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BC850
- VCEsat-Max :
- 0.6 V
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Power Dissipation :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Published :
- 2009
- Power Dissipation :
- 200mW
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Series :
- Automotive, AEC-Q101
- Collector Emitter Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BC850CW,135
BC850CW,135 Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC850CW,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC850CW,135 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC850CW,135 Applications
There are a lot of Nexperia USA Inc.
BC850CW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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