BC850CMTF
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- Mfr.Part #
- BC850CMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 17,505
- In Stock ：
- 17,505
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Number of Pins :
- 3
- Published :
- 2011
- Current Rating :
- 100mA
- Factory Lead Time :
- 13 Weeks
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- hFE Min :
- 110
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Length :
- 2.92mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Voltage - Rated DC :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Saturation Voltage :
- 200mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 45V
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Frequency :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 310mW
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 310mW
- Width :
- 1.3mm
- Collector Emitter Breakdown Voltage :
- 45V
- Height :
- 930μm
- Weight :
- 30mg
- RoHS Status :
- RoHS Compliant
- Base Part Number :
- BC850
- Pbfree Code :
- yes
- Transition Frequency :
- 300MHz
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Terminal Form :
- Gull wing
- Datasheets
- BC850CMTF
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850CMTF Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BC850CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC850CMTF Applications
There are a lot of ON Semiconductor
BC850CMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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