BC850CMTF
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- Mfr.Part #
- BC850CMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 17,505
- In Stock ：
- 17,505
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Collector Current :
- 100mA
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 100mA
- Length :
- 2.92mm
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 200mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Base Part Number :
- BC850
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 13 Weeks
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Transition Frequency :
- 300MHz
- Published :
- 2011
- Power Dissipation :
- 310mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Weight :
- 30mg
- Max Breakdown Voltage :
- 45V
- Width :
- 1.3mm
- Frequency :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- hFE Min :
- 110
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 310mW
- Height :
- 930μm
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Pins :
- 3
- Voltage - Rated DC :
- 45V
- Element Configuration :
- Single
- Datasheets
- BC850CMTF
BC850CMTF Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850CMTF Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BC850CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC850CMTF Applications
There are a lot of ON Semiconductor
BC850CMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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