BC850CMTF
- Mfr.Part #
- BC850CMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 17,505
- In Stock :
- 17,505
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Radiation Hardening :
- No
- hFE Min :
- 110
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mounting Type :
- Surface Mount
- Weight :
- 30mg
- Transistor Type :
- NPN
- Max Power Dissipation :
- 310mW
- Width :
- 1.3mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- Base Part Number :
- BC850
- Collector Emitter Saturation Voltage :
- 200mV
- Terminal Form :
- Gull wing
- Power Dissipation :
- 310mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 300MHz
- Published :
- 2011
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Factory Lead Time :
- 13 Weeks
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 45V
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Height :
- 930μm
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Transition Frequency :
- 300MHz
- Current Rating :
- 100mA
- Length :
- 2.92mm
- Max Breakdown Voltage :
- 45V
- Datasheets
- BC850CMTF

NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850CMTF Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BC850CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC850CMTF Applications
There are a lot of ON Semiconductor
BC850CMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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