BC850CLT1
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- Mfr.Part #
- BC850CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 3,401
- In Stock ：
- 3,401
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Collector Current :
- 100mA
- Height :
- 940μm
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Cut Tape (CT)
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- 6V
- Voltage - Rated DC :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Terminations :
- 3
- Base Part Number :
- BC850*L
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- 600mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Published :
- 2005
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- hFE Min :
- 420
- Current Rating :
- 100mA
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 225mW
- Element Configuration :
- Single
- Width :
- 1.3mm
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 45V
- Power Dissipation :
- 300mW
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pin Count :
- 3
- Length :
- 2.9mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 100MHz
- Contact Plating :
- Tin
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Position :
- Dual
- Datasheets
- BC850CLT1
BC850CLT1 Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC850CLT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC850CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC850CLT1G Applications
There are a lot of ON Semiconductor
BC850CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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