BC850CLT1
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- Mfr.Part #
- BC850CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 3,401
- In Stock ：
- 3,401
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Contact Plating :
- Tin
- Height :
- 940μm
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 225mW
- Number of Terminations :
- 3
- Power Dissipation :
- 300mW
- Pin Count :
- 3
- Length :
- 2.9mm
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Collector Base Voltage (VCBO) :
- 50V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 600mV
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Packaging :
- Cut Tape (CT)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 45V
- Current Rating :
- 100mA
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 420
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- NPN
- Width :
- 1.3mm
- Collector Emitter Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Base Part Number :
- BC850*L
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2005
- Max Breakdown Voltage :
- 45V
- Voltage - Rated DC :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Datasheets
- BC850CLT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC850CLT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC850CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC850CLT1G Applications
There are a lot of ON Semiconductor
BC850CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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