BC850BW,115
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- Mfr.Part #
- BC850BW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT323
- Stock
- 14,936
- In Stock ：
- 14,936
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 200
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BC850
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Type :
- NPN
- Number of Elements :
- 1
- VCEsat-Max :
- 0.6 V
- Power Dissipation :
- 200mW
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Published :
- 2009
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 45V
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Pin Count :
- 3
- Terminal Position :
- Dual
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Package / Case :
- SC-70, SOT-323
- Datasheets
- BC850BW,115
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC850BW,115 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC850BW,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC850BW,115 Applications
There are a lot of Nexperia USA Inc.
BC850BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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