BC850BW,115
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- Mfr.Part #
- BC850BW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT323
- Stock
- 14,936
- In Stock ：
- 14,936
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 200
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Base Part Number :
- BC850
- Transistor Element Material :
- SILICON
- VCEsat-Max :
- 0.6 V
- Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 200mW
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2009
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SC-70, SOT-323
- Datasheets
- BC850BW,115
BC850BW,115 Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC850BW,115 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC850BW,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC850BW,115 Applications
There are a lot of Nexperia USA Inc.
BC850BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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