BC850BLT1
- Mfr.Part #
- BC850BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 7,838
- In Stock :
- 7,838
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 3.04mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 45V
- Collector Emitter Saturation Voltage :
- 600mV
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 200
- Gain Bandwidth Product :
- 100MHz
- Current Rating :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 225mW
- Collector Base Voltage (VCBO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Width :
- 1.4mm
- Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BC850*L
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Height :
- 1.11mm
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 45V
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Datasheets
- BC850BLT1
BC850BLT1 Documents

NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850BLT1G Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC850BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC850BLT1G Applications
There are a lot of ON Semiconductor
BC850BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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