BC850BLT1
- Mfr.Part #
- BC850BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 7,838
- In Stock :
- 7,838
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 200
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Base Part Number :
- BC850*L
- Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 225mW
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transition Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Current Rating :
- 100mA
- Collector Base Voltage (VCBO) :
- 50V
- Length :
- 3.04mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Height :
- 1.11mm
- Width :
- 1.4mm
- Max Breakdown Voltage :
- 45V
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Power Dissipation :
- 300mW
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Voltage - Rated DC :
- 45V
- Collector Emitter Saturation Voltage :
- 600mV
- Datasheets
- BC850BLT1

NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850BLT1G Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC850BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC850BLT1G Applications
There are a lot of ON Semiconductor
BC850BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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