BC849BW
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- Mfr.Part #
- BC849BW
- Manufacturer
- Diotec Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- VCEsat-Max :
- 0.6 V
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 200mW
- Published :
- 2001
- Pin Count :
- 3
- Package / Case :
- SC-70, SOT-323
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 30V
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 30V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 100MHz
- Base Part Number :
- BC849
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 200mW
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC849BW
BC849BW Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC849BW,115 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849BW,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849BW,115 Applications
There are a lot of Nexperia USA Inc.
BC849BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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