BC849BW
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- Mfr.Part #
- BC849BW
- Manufacturer
- Diotec Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- NPN
- Package / Case :
- SC-70, SOT-323
- Gain Bandwidth Product :
- 100MHz
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Pin Count :
- 3
- VCEsat-Max :
- 0.6 V
- Published :
- 2001
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Power Dissipation :
- 200mW
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Base Part Number :
- BC849
- Series :
- Automotive, AEC-Q101
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 200mW
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 30V
- JESD-609 Code :
- e3
- Datasheets
- BC849BW
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC849BW,115 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849BW,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849BW,115 Applications
There are a lot of Nexperia USA Inc.
BC849BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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