BC849BLT1
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- Mfr.Part #
- BC849BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23-3
- Stock
- 38,067
- In Stock ：
- 38,067
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 30V
- Number of Terminations :
- 3
- Height :
- 940μm
- Max Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Collector Current :
- 100mA
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Form :
- Gull wing
- Width :
- 1.3mm
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 30V
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Max Power Dissipation :
- 300mW
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Collector Emitter Saturation Voltage :
- 600mV
- Gain Bandwidth Product :
- 100MHz
- Current Rating :
- 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Frequency :
- 100MHz
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- hFE Min :
- 200
- Length :
- 2.9mm
- Lead Free :
- Lead Free
- Power Dissipation :
- 300mW
- Datasheets
- BC849BLT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC849BLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC849BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC849BLT1G Applications
There are a lot of ON Semiconductor
BC849BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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