BC849BLT1
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- Mfr.Part #
- BC849BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23-3
- Stock
- 38,067
- In Stock ：
- 38,067
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- 600mV
- Frequency :
- 100MHz
- hFE Min :
- 200
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 300mW
- Max Collector Current :
- 100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Max Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Form :
- Gull wing
- Length :
- 2.9mm
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Width :
- 1.3mm
- Collector Base Voltage (VCBO) :
- 30V
- Pbfree Code :
- yes
- Height :
- 940μm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2007
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Current Rating :
- 100mA
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 30V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Rated DC :
- 30V
- Datasheets
- BC849BLT1
BC849BLT1 Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC849BLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC849BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC849BLT1G Applications
There are a lot of ON Semiconductor
BC849BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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