BC849BE6327HTSA1
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- Mfr.Part #
- BC849BE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23
- Stock
- 1,973
- In Stock ：
- 1,973
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 30V
- Width :
- 1.3mm
- Height :
- 1mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Power Dissipation :
- 330mW
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Base Part Number :
- BC849
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Max Power Dissipation :
- 330mW
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Frequency :
- 250MHz
- Length :
- 2.9mm
- Voltage - Rated DC :
- 30V
- Configuration :
- Single
- Number of Elements :
- 1
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 30V
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Saturation Voltage :
- 600mV
- Contact Plating :
- Tin
- Transition Frequency :
- 250MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Published :
- 2008
- Pbfree Code :
- yes
- Current Rating :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Voltage (VCEO) :
- 600mV
- Halogen Free :
- Not Halogen Free
- Datasheets
- BC849BE6327HTSA1
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC849BE6327HTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 250MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC849BE6327HTSA1 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BC849BE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC849BE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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