BC848CWT1
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- Mfr.Part #
- BC848CWT1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANSISTOR NPN 30V 100MA SOT-323
- Stock
- 33,083
- In Stock ：
- 33,083
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 30V
- Transistor Application :
- AMPLIFIER
- Current Rating :
- 100mA
- Transistor Element Material :
- SILICON
- Frequency :
- 100MHz
- Width :
- 1.35mm
- Published :
- 2005
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 600mV
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- Max Power Dissipation :
- 150mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Package / Case :
- SC-70, SOT-323
- Polarity/Channel Type :
- NPN
- Length :
- 2.2mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 270
- Transistor Type :
- NPN
- Power Dissipation :
- 150mW
- Height :
- 900μm
- Collector Emitter Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 2 Weeks
- Collector Base Voltage (VCBO) :
- 30V
- Surface Mount :
- yes
- Number of Pins :
- 3
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Datasheets
- BC848CWT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848CWT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC848CWT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848CWT1G Applications
There are a lot of ON Semiconductor
BC848CWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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