BC848BLT3G
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- Mfr.Part #
- BC848BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23-3
- Stock
- 153,604
- In Stock ：
- 153,604
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 100mA
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 30V
- Surface Mount :
- yes
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- 600mV
- Frequency :
- 100MHz
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 300mW
- hFE Min :
- 200
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- Datasheets
- BC848BLT3G
BC848BLT3G Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC848BLT3G Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 30V volts.The maximum collector current is 100mA volts.
BC848BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848BLT3G Applications
There are a lot of ON Semiconductor
BC848BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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