BC847CT-7-F
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- Mfr.Part #
- BC847CT-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT523
- Stock
- 1,673
- In Stock ：
- 1,673
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 1.6mm
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 100mA
- Collector Emitter Saturation Voltage :
- 600mV
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Width :
- 800μm
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 45V
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e3
- Power Dissipation :
- 150mW
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Weight :
- 2.012816mg
- Max Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 150mW
- Package / Case :
- SOT-523
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 100MHz
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 50V
- hFE Min :
- 420
- Published :
- 2007
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage :
- 45V
- Height :
- 750μm
- Terminal Form :
- Gull wing
- Base Part Number :
- BC847
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 100MHz
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Datasheets
- BC847CT-7-F
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-523 Tape & Reel (TR) Surface Mount
BC847CT-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Continuous collector voltages of 100mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC847CT-7-F Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847CT-7-F Applications
There are a lot of Diodes Incorporated
BC847CT-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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