BC847CQB-QZ
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- Mfr.Part #
- BC847CQB-QZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR IN DFN PACK
- Stock
- 21,218
- In Stock ：
- 21,218
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Type :
- BJTs - Bipolar Transistors
- Subcategory :
- Transistors
- Mounting Style :
- SMD/SMT
- Series :
- Automotive, AEC-Q101
- Minimum Operating Temperature :
- - 55 C
- Product Status :
- Active
- Manufacturer :
- Nexperia
- Transistor Polarity :
- NPN
- Technology :
- Si
- Continuous Collector Current :
- 100
- Transition Frequency :
- 100
- Package :
- Tape and Reel (TR)
- Configuration :
- Single
- Brand :
- Nexperia
- Package / Case :
- 3-XDFN Exposed Pad
- Maximum Operating Temperature :
- + 150 C
- RoHS :
- Details
- Supplier Device Package :
- DFN1110D-3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Frequency - Transition :
- 100MHz
- Operating Temperature :
- 150°C (TJ)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA, 5V
- Packaging :
- MouseReel
- Qualification :
- AEC-Q101
- Current - Collector Cutoff (Max) :
- 15nA (ICBO)
- Power - Max :
- 340 mW
- Current - Collector (Ic) (Max) :
- 100 mA
- Transistor Type :
- NPN
- Product Category :
- Bipolar Transistors - BJT
- Power Dissipation :
- 420
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Mounting Type :
- Surface Mount, Wettable Flank
- Datasheets
- BC847CQB-QZ
NPN 150°C (TJ) 15nA (ICBO) 3-XDFN Exposed Pad MouseReel Surface Mount, Wettable Flank
BC847CQB-QZ Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA, 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 100.A transition frequency of 100 is present in the part.The product comes in the supplier device package of DFN1110D-3.A 45 V maximal voltage - Collector Emitter Breakdown is present in the device.
BC847CQB-QZ Features
the DC current gain for this device is 420 @ 2mA, 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100
the supplier device package of DFN1110D-3
BC847CQB-QZ Applications
There are a lot of Nexperia USA Inc.
BC847CQB-QZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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