BC847BMB315
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- Mfr.Part #
- BC847BMB315
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR,
- Stock
- 25,770
- In Stock ：
- 25,770
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 45V
- hFE Min :
- 200
- Package / Case :
- 3-XFDFN
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Base Part Number :
- BC847
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- BOTTOM
- Frequency :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Power Dissipation :
- 250mW
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Published :
- 2011
- Collector Emitter Saturation Voltage :
- 200mV
- Max Power Dissipation :
- 250mW
- Datasheets
- BC847BMB315
Specialized ICs NXP Semiconductors BC847BMB315 Overview
Specialized ICs NXP Semiconductors BC847BMB315 represents a high-performance NPN bipolar junction transistor (BJT) designed for low power and medium voltage applications. It features a maximum collector-emitter voltage of 45V, and a collector current of up to 100mA, making it suitable for a variety of switching and amplification tasks. This transistor is encapsulated in a small 3-XFDFN package, optimized for surface-mount applications. It supports operation up to 150°C (junction temperature), ensuring reliability in high-temperature environments. The BC847BMB315 offers excellent current gain (200 at 2mA, 5V), low collector-emitter saturation voltage (200mV), and high transition frequency (100MHz), facilitating efficient performance in fast-switching circuits. The low leakage current (15nA ICBO) further enhances its utility in precision applications.
Key Features
DC Current Gain: 200 @ 2mA, 5V
Collector-Emitter Saturation Voltage: 200mV
VCE Saturation (Max): 400mV @ 5mA, 100mA
Emitter Base Voltage: 6V
Transition Frequency: 100MHz
Applications
- Inverter
- Interface
- Driver
- Muting
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