BC847,215
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- Mfr.Part #
- BC847,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR NPN 45V 100MA SOT23
- Stock
- 1,618
- In Stock ：
- 1,618
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- hFE Min :
- 110
- Factory Lead Time :
- 4 Weeks
- Length :
- 3mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Base Part Number :
- BC847
- Height :
- 1.1mm
- Contact Plating :
- Tin
- Termination :
- SMD/SMT
- Transistor Application :
- SWITCHING
- Published :
- 2008
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Ambient Temperature Range High :
- 150°C
- Max Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 250mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- Power Dissipation :
- 250mW
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 100mA
- Collector Emitter Saturation Voltage :
- 200mV
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Max Junction Temperature (Tj) :
- 150°C
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Width :
- 1.4mm
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Datasheets
- BC847,215
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC847,215 Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847,215 Applications
There are a lot of Nexperia USA Inc.
BC847,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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