BC55PA,115
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- Mfr.Part #
- BC55PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A DFN2020D-3
- Stock
- 40
- In Stock ：
- 40
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2011
- Power Dissipation :
- 1.65W
- Max Power Dissipation :
- 420mW
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Package / Case :
- 3-UDFN Exposed Pad
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Frequency :
- 180MHz
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 8 Weeks
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Type :
- NPN
- Power - Max :
- 420mW
- Transition Frequency :
- 180MHz
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 1A
- Datasheets
- BC55PA,115
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UDFN Exposed Pad Tape & Reel (TR) Surface Mount
BC55PA,115 Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 180MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
BC55PA,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BC55PA,115 Applications
There are a lot of Nexperia USA Inc.
BC55PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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