BC559C
- Mfr.Part #
- BC559C
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92
- Stock
- 6,502
- In Stock :
- 6,502
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 110
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Gain Bandwidth Product :
- 150MHz
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 500mW
- Factory Lead Time :
- 6 Weeks
- Lead Free :
- Lead Free
- Base Part Number :
- BC559
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Max Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 30V
- Current Rating :
- -100mA
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Frequency :
- 150MHz
- Width :
- 4.19mm
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Published :
- 2007
- Additional Feature :
- LOW NOISE
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 30V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 240mg
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Contact Plating :
- Tin
- Voltage - Rated DC :
- -30V
- JESD-609 Code :
- e3
- Height :
- 5.33mm
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Saturation Voltage :
- -250mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Packaging :
- Tape and Box (TB)
- Number of Terminations :
- 3
- Transition Frequency :
- 150MHz
- Transistor Type :
- PNP
- Max Power Dissipation :
- 500mW
- Number of Elements :
- 1
- Length :
- 5.2mm
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- -30V
- Emitter Base Voltage (VEBO) :
- -5V
- Datasheets
- BC559C

PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC559CTA Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 100mA volts is possible.
BC559CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC559CTA Applications
There are a lot of ON Semiconductor
BC559CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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