BC558BTA
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- Mfr.Part #
- BC558BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92-3
- Stock
- 10,100
- In Stock ：
- 10,100
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -30V
- Gain Bandwidth Product :
- 150MHz
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 30V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 7 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Pbfree Code :
- yes
- Max Collector Current :
- 100mA
- Weight :
- 240mg
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Length :
- 5.2mm
- Collector Emitter Voltage (VCEO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -30V
- Width :
- 4.19mm
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -100mA
- Max Breakdown Voltage :
- 30V
- Collector Emitter Saturation Voltage :
- -250mV
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Base Part Number :
- BC558
- REACH SVHC :
- No SVHC
- Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Transition Frequency :
- 150MHz
- Contact Plating :
- Tin
- Height :
- 5.33mm
- Published :
- 2007
- Max Power Dissipation :
- 500mW
- Packaging :
- Tape and Box (TB)
- hFE Min :
- 110
- Power Dissipation :
- 500mW
- Datasheets
- BC558BTA
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC558BTA Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC558BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC558BTA Applications
There are a lot of ON Semiconductor
BC558BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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