BC558BTA
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- Mfr.Part #
- BC558BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92-3
- Stock
- 10,100
- In Stock ：
- 10,100
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 150MHz
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 30V
- Width :
- 4.19mm
- hFE Min :
- 110
- Number of Terminations :
- 3
- Height :
- 5.33mm
- Packaging :
- Tape and Box (TB)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Gain Bandwidth Product :
- 150MHz
- Frequency :
- 150MHz
- Published :
- 2007
- Voltage - Rated DC :
- -30V
- Collector Base Voltage (VCBO) :
- -30V
- Pbfree Code :
- yes
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- REACH SVHC :
- No SVHC
- Base Part Number :
- BC558
- Collector Emitter Saturation Voltage :
- -250mV
- Qualification Status :
- Not Qualified
- Current Rating :
- -100mA
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Length :
- 5.2mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 500mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Max Breakdown Voltage :
- 30V
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- BOTTOM
- Contact Plating :
- Tin
- Max Collector Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 240mg
- Transistor Type :
- PNP
- Max Power Dissipation :
- 500mW
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 7 Weeks
- Emitter Base Voltage (VEBO) :
- -5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Datasheets
- BC558BTA
BC558BTA Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC558BTA Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC558BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC558BTA Applications
There are a lot of ON Semiconductor
BC558BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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