BC557C,112
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- Mfr.Part #
- BC557C,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO-92
- Stock
- 16,514
- In Stock ：
- 16,514
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Frequency - Transition :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BC557
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- HTS Code :
- 8541.21.00.95
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Published :
- 2007
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- VCEsat-Max :
- 0.65 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 500mW
- JESD-30 Code :
- O-PBCY-T3
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Peak Reflow Temperature (Cel) :
- 250
- Surface Mount :
- No
- Current - Collector (Ic) (Max) :
- 100mA
- Power Dissipation-Max (Abs) :
- 0.5W
- Datasheets
- BC557C,112
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC557C,112 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.A transition frequency of 100MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC557C,112 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC557C,112 Applications
There are a lot of NXP USA Inc.
BC557C,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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