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  4. Transistors - Bipolar (BJT) - Single
  5. BC557B_D11Z
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    BC557B_D11Z

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    Mfr.Part #
    BC557B_D11Z
    Manufacturer
    onsemi
    Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Datasheet
    Download
    Description
    TRANS PNP 45V 0.1A TO92-3
    Stock
    8,260
    In Stock ：
    8,260

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    Manufacturer :
    onsemi
    Product Category :
    Transistors - Bipolar (BJT) - Single
    Frequency - Transition :
    150MHz
    Power - Max :
    500mW
    DC Current Gain (hFE) (Min) @ Ic, Vce :
    200 @ 2mA 5V
    Package / Case :
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Base Part Number :
    BC557
    Transistor Type :
    PNP
    Operating Temperature :
    150°C TJ
    Moisture Sensitivity Level (MSL) :
    1 (Unlimited)
    Voltage - Collector Emitter Breakdown (Max) :
    45V
    Vce Saturation (Max) @ Ib, Ic :
    650mV @ 5mA, 100mA
    Current - Collector (Ic) (Max) :
    100mA
    Packaging :
    Tape and Reel (TR)
    Current - Collector Cutoff (Max) :
    15nA ICBO
    Mounting Type :
    Through Hole
    Datasheets
    BC557B_D11Z
    Introducing Transistors - Bipolar (BJT) - Single onsemi BC557B_D11Z from Chip IC,where excellence meets affordability. This product stands out with its Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Base Part Number：BC557, Operating Temperature：150°C TJ, Mounting Type：Through Hole, BC557B_D11Z pinout, BC557B_D11Z datasheet PDF, BC557B_D11Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC557B_D11Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

    onsemi BC557B_D11Z


    PNP 150°C TJ 15nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

    BC557B_D11Z Overview


    In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.The device exhibits a collector-emitter breakdown at 45V.

    BC557B_D11Z Features


    the DC current gain for this device is 200 @ 2mA 5V
    the vce saturation(Max) is 650mV @ 5mA, 100mA


    BC557B_D11Z Applications


    There are a lot of ON Semiconductor
    BC557B_D11Z applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting
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