BC557ATA
- Mfr.Part #
- BC557ATA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO92-3
- Stock
- 20,977
- In Stock :
- 20,977
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- hFE Min :
- 110
- Base Part Number :
- BC557
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Saturation Voltage :
- -250mV
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 45V
- Voltage - Rated DC :
- -45V
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 45V
- Height :
- 5.33mm
- Factory Lead Time :
- 2 Weeks
- Collector Base Voltage (VCBO) :
- -50V
- Max Power Dissipation :
- 500mW
- Frequency :
- 150MHz
- Number of Pins :
- 3
- Transition Frequency :
- 150MHz
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Current Rating :
- -100mA
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Mount :
- Through Hole
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Weight :
- 240mg
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mounting Type :
- Through Hole
- Width :
- 4.19mm
- Gain Bandwidth Product :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Power Dissipation :
- 500mW
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Length :
- 5.2mm
- Collector Emitter Voltage (VCEO) :
- 45V
- REACH SVHC :
- No SVHC
- Datasheets
- BC557ATA

PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC557ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC557ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC557ATA Applications
There are a lot of ON Semiconductor
BC557ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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