BC557A
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- Mfr.Part #
- BC557A
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO92
- Stock
- 24,847
- In Stock ：
- 24,847
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 5.2mm
- Contact Plating :
- Tin
- Voltage - Rated DC :
- -45V
- Base Part Number :
- BC557
- Transition Frequency :
- 150MHz
- Mount :
- Through Hole
- Max Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 500mW
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Weight :
- 240mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Elements :
- 1
- Factory Lead Time :
- 2 Weeks
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -250mV
- Transistor Type :
- PNP
- Current Rating :
- -100mA
- Gain Bandwidth Product :
- 150MHz
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- REACH SVHC :
- No SVHC
- Height :
- 5.33mm
- Width :
- 4.19mm
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- -50V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Emitter Base Voltage (VEBO) :
- -5V
- Frequency :
- 150MHz
- Packaging :
- Tape and Box (TB)
- Published :
- 2007
- hFE Min :
- 110
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheets
- BC557A
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC557ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC557ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC557ATA Applications
There are a lot of ON Semiconductor
BC557ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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