BC557A
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- Mfr.Part #
- BC557A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO92
- Stock
- 4,000
- In Stock ：
- 4,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Max Collector Current :
- 100mA
- Current Rating :
- -100mA
- Voltage - Rated DC :
- -45V
- Power Dissipation :
- 500mW
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 150MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Lead Free :
- Lead Free
- Weight :
- 240mg
- Collector Emitter Saturation Voltage :
- -250mV
- ECCN Code :
- EAR99
- Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- -50V
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Height :
- 5.33mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number :
- BC557
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Width :
- 4.19mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Length :
- 5.2mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Packaging :
- Tape and Box (TB)
- Gain Bandwidth Product :
- 150MHz
- Max Power Dissipation :
- 500mW
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- hFE Min :
- 110
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BC557A
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC557ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC557ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC557ATA Applications
There are a lot of ON Semiconductor
BC557ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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