BC557A
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- Mfr.Part #
- BC557A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO92
- Stock
- 4,000
- In Stock ：
- 4,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Published :
- 2007
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -5V
- Length :
- 5.2mm
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Weight :
- 240mg
- Transistor Application :
- SWITCHING
- Current Rating :
- -100mA
- Number of Elements :
- 1
- Voltage - Rated DC :
- -45V
- Width :
- 4.19mm
- Pbfree Code :
- yes
- Base Part Number :
- BC557
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -250mV
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- -50V
- Height :
- 5.33mm
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Packaging :
- Tape and Box (TB)
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 150MHz
- Max Power Dissipation :
- 500mW
- Mount :
- Through Hole
- Max Breakdown Voltage :
- 45V
- hFE Min :
- 110
- Collector Emitter Voltage (VCEO) :
- 45V
- Factory Lead Time :
- 2 Weeks
- Max Collector Current :
- 100mA
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 150MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 45V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 500mW
- Datasheets
- BC557A
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC557ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC557ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC557ATA Applications
There are a lot of ON Semiconductor
BC557ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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