BC556B-AP
- Mfr.Part #
- BC556B-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A TO92
- Stock
- 1,391
- In Stock :
- 1,391
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Pin Count :
- 3
- Base Product Number :
- BC556
- Series :
- -
- Pbfree Code :
- yes
- Power - Max :
- 625 mW
- Reach Compliance Code :
- Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA, 5V
- Collector Current-Max (IC) :
- 0.1 A
- Product Status :
- Obsolete
- Qualification Status :
- Not Qualified
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- JESD-30 Code :
- O-PBCY-T3
- JEDEC-95 Code :
- TO-92
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Mounting Type :
- Through Hole
- Number of Terminals :
- 3
- JESD-609 Code :
- e3
- Voltage - Collector Emitter Breakdown (Max) :
- 65 V
- Package :
- Bulk
- RoHS :
- Compliant
- Current - Collector (Ic) (Max) :
- 100 mA
- Frequency - Transition :
- 150MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package Shape :
- Round
- Current - Collector Cutoff (Max) :
- 100nA
- Collector-Emitter Voltage-Max :
- 65 V
- Terminal Position :
- BOTTOM
- Configuration :
- Single
- Supplier Device Package :
- TO-92
- Polarity/Channel Type :
- PNP
- DC Current Gain-Min (hFE) :
- 180
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Surface Mount :
- No
- Lead Free :
- Contains Lead
- Manufacturer :
- Micro Commercial Components
- Datasheets
- BC556B-AP
PNP -55°C ~ 150°C (TJ) 100nA 1 Elements SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole
BC556BAP Overview
In this device, the DC current gain is 180 @ 2mA, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Supplier device package TO-92 comes with the product.Voltage of maximal collector-emitter is set to 65 V.The device exhibits a collector-emitter breakdown at 65 V.
BC556BAP Features
the DC current gain for this device is 180 @ 2mA, 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the supplier device package of TO-92
BC556BAP Applications
There are a lot of Micro Commercial Components
BC556BAP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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