BC556B

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pbfree Code :

yes

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

JESD-609 Code :

e3

Contact Plating :

Tin

Number of Pins :

3

Base Part Number :

BC556

ECCN Code :

EAR99

Frequency :

150MHz

Number of Elements :

1

Published :

2007

Collector Emitter Breakdown Voltage :

65V

Current :

1A

Current Rating :

-100mA

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Collector Base Voltage (VCBO) :

80V

Height :

4.58mm

Gain Bandwidth Product :

150MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

REACH SVHC :

No SVHC

Factory Lead Time :

6 Weeks

Weight :

240.007063mg

Width :

3.86mm

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Transition Frequency :

150MHz

Collector Emitter Saturation Voltage :

-250mV

Packaging :

Tape and Box (TB)

Mounting Type :

Through Hole

Polarity/Channel Type :

PNP

Length :

4.58mm

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max) :

15nA ICBO

Voltage :

65V

Voltage - Rated DC :

-65V

Max Power Dissipation :

500mW

Collector Emitter Voltage (VCEO) :

65V

Lead Free :

Lead Free

Terminal Position :

BOTTOM

Mount :

Surface Mount, Through Hole

Transistor Type :

PNP

hFE Min :

110

Max Breakdown Voltage :

65V

Transistor Application :

SWITCHING

Element Configuration :

Single

Power Dissipation :

500mW

Emitter Base Voltage (VEBO) :

5V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)