BC550C
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- Mfr.Part #
- BC550C
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92
- Stock
- 44,330
- In Stock ：
- 44,330
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 3.86mm
- Transition Frequency :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Terminal Form :
- Wire
- Power Dissipation :
- 500mW
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 45V
- Collector Emitter Saturation Voltage :
- 250mV
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 45V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 110
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Current Rating :
- 100mA
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Weight :
- 240mg
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Length :
- 4.58mm
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Factory Lead Time :
- 7 Weeks
- Base Part Number :
- BC550
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Published :
- 2002
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Height :
- 4.58mm
- Case Connection :
- Isolated
- Gain Bandwidth Product :
- 300MHz
- Max Power Dissipation :
- 500mW
- Collector Base Voltage (VCBO) :
- 50V
- Number of Terminations :
- 3
- Datasheets
- BC550C
,TO-226_straightlead.jpg)
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC550CTA Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC550CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC550CTA Applications
There are a lot of ON Semiconductor
BC550CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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