BC550C
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- Mfr.Part #
- BC550C
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92
- Stock
- 44,330
- In Stock ：
- 44,330
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 50V
- Height :
- 4.58mm
- Mounting Type :
- Through Hole
- hFE Min :
- 110
- Polarity/Channel Type :
- NPN
- Weight :
- 240mg
- Max Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Radiation Hardening :
- No
- Packaging :
- Tape and Box (TB)
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Current Rating :
- 100mA
- Contact Plating :
- Tin
- Terminal Form :
- Wire
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Power Dissipation :
- 500mW
- Gain Bandwidth Product :
- 300MHz
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Pbfree Code :
- yes
- Length :
- 4.58mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Case Connection :
- Isolated
- Collector Emitter Breakdown Voltage :
- 45V
- Factory Lead Time :
- 7 Weeks
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Frequency :
- 300MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 250mV
- Max Collector Current :
- 100mA
- Width :
- 3.86mm
- Base Part Number :
- BC550
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Terminations :
- 3
- Transition Frequency :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Published :
- 2002
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 500mW
- Voltage - Rated DC :
- 45V
- Datasheets
- BC550C
,TO-226_straightlead.jpg)
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC550CTA Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).300MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC550CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC550CTA Applications
There are a lot of ON Semiconductor
BC550CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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