BC51PA,115
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- Mfr.Part #
- BC51PA,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- NEXPERIA BC51PA - SMALL SIGNAL B
- Stock
- 50
- In Stock ：
- 50
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- NO LEAD
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 8 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Power - Max :
- 420mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Base Part Number :
- BC51PA
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Frequency :
- 145MHz
- Pin Count :
- 3
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 45V
- Max Power Dissipation :
- 420mW
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 1.65W
- Published :
- 2011
- Package / Case :
- 3-PowerUDFN
- Transition Frequency :
- 145MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 45V
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 45V
- Datasheets
- BC51PA,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-PowerUDFN Tape & Reel (TR) Surface Mount
BC51PA,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 63 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 145MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 1A volts.
BC51PA,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BC51PA,115 Applications
There are a lot of Nexperia USA Inc.
BC51PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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