BC 808-25 E6327
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- Mfr.Part #
- BC 808-25 E6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.5A SOT23
- Stock
- 13,243
- In Stock ：
- 13,243
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation-Max (Abs) :
- 0.33W
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Configuration :
- Single
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PDSO-G3
- Published :
- 2001
- Current - Collector (Ic) (Max) :
- 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 200MHz
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Power - Max :
- 330mW
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Terminal Finish :
- MATTE TIN
- ECCN Code :
- EAR99
- Transition Frequency :
- 200MHz
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BC808
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Number of Elements :
- 1
- Datasheets
- BC 808-25 E6327
BC 808-25 E6327 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC 808-25 E6327 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 200MHz.The device has a 25V maximal voltage - Collector Emitter Breakdown.
BC 808-25 E6327 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 200MHz
BC 808-25 E6327 Applications
There are a lot of Infineon Technologies
BC 808-25 E6327 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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