BC 807-25 E6327
- Mfr.Part #
- BC 807-25 E6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SOT23
- Stock
- 144,000
- In Stock :
- 144,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Power Dissipation-Max (Abs) :
- 0.33W
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Base Part Number :
- BC807
- Published :
- 2007
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Polarity/Channel Type :
- PNP
- Power - Max :
- 330mW
- Reach Compliance Code :
- Compliant
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Current - Collector (Ic) (Max) :
- 500mA
- Frequency - Transition :
- 200MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 200MHz
- Terminal Position :
- Dual
- JESD-30 Code :
- R-PDSO-G3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Datasheets
- BC 807-25 E6327
BC 807-25 E6327 Documents

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC 807-25 E6327 Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.200MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.
BC 807-25 E6327 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 200MHz
BC 807-25 E6327 Applications
There are a lot of Infineon Technologies
BC 807-25 E6327 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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