ATF-55143-BLKG

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Min Operating Temperature :

-65°C

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Transistor Type :

E-pHEMT

Max Power Dissipation :

270mW

Packaging :

Strip

Power - Output :

14.4dBm

Continuous Drain Current (ID) :

100mA

Number of Pins :

4

Case Connection :

SOURCE

Factory Lead Time :

6 Weeks

Max Operating Temperature :

150°C

Width :

1.35mm

Drain to Source Voltage (Vdss) :

2.7V

Mount :

Surface Mount

ECCN Code :

EAR99

Base Part Number :

ATF-55143

Drain Current-Max (Abs) (ID) :

0.1A

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

1V

Package / Case :

SC-82A, SOT-343

FET Technology :

HIGH ELECTRON MOBILITY

Gain :

17.7dB

Frequency :

2GHz

Min Breakdown Voltage :

5V

Peak Reflow Temperature (Cel) :

260

Length :

2.25mm

Nominal Supply Current :

10mA

Power Dissipation :

270mW

Number of Elements :

1

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Noise Figure :

0.6dB

Number of Terminations :

4

Current Rating :

100mA

Published :

2012

Voltage - Rated DC :

2.7V

Height :

1mm

Terminal Position :

Dual