ATF-35143-TR1G

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Type :

pHEMT FET

Factory Lead Time :

6 Weeks

Max Operating Temperature :

160°C

Polarity/Channel Type :

N-Channel

Published :

2005

Drain to Source Voltage (Vdss) :

5.5V

Max Power Dissipation :

300mW

Min Operating Temperature :

-65°C

Gate to Source Voltage (Vgs) :

-5V

JESD-609 Code :

e3

FET Technology :

HIGH ELECTRON MOBILITY

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

80mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

80mA

Nominal Vgs :

-5 V

Termination :

SMD/SMT

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

5.5V

REACH SVHC :

No SVHC

Case Connection :

SOURCE

Frequency :

2GHz

Power - Output :

10dBm

Terminal Position :

Dual

Number of Terminations :

4

Package / Case :

SC-82A, SOT-343

Lead Free :

Lead Free

Dual Supply Voltage :

5.5V

ECCN Code :

EAR99

Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Gain :

18dB

Power Dissipation :

300mW

Current - Test :

15mA

Contact Plating :

Tin

Base Part Number :

ATF-35143

Mount :

Surface Mount

Number of Pins :

4

Voltage - Test :

2V

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Noise Figure :

0.4dB