ATF-36077-STR
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- Mfr.Part #
- ATF-36077-STR
- Manufacturer
- Broadcom
- Package / Case
- 4-SMD (77 Pack)
- Datasheet
- Download
- Description
- FET RF 3V 12GHZ 77-SMD
- Stock
- 6,486
- In Stock ：
- 6,486
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- Manufacturer :
- Broadcom
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- FET Technology :
- HIGH ELECTRON MOBILITY
- DS Breakdown Voltage-Min :
- 3V
- Terminal Form :
- Flat
- Package / Case :
- 4-SMD (77 Pack)
- Max Power Dissipation :
- 180mW
- Reach Compliance Code :
- Unknown
- Published :
- 1999
- Gate to Source Voltage (Vgs) :
- -3V
- Number of Pins :
- 4
- Configuration :
- Single
- Transistor Type :
- pHEMT FET
- JESD-609 Code :
- e4
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Mount :
- Surface Mount
- Voltage - Test :
- 1.5V
- Voltage - Rated DC :
- 3V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Noise Figure :
- 0.5dB
- Case Connection :
- SOURCE
- Current Rating :
- 45mA
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 4
- Gain :
- 12dB
- Min Operating Temperature :
- -65°C
- Drain to Source Voltage (Vdss) :
- 1.5V
- Terminal Position :
- Radial
- Continuous Drain Current (ID) :
- 25mA
- Packaging :
- Bulk
- Frequency :
- 12GHz
- Operating Mode :
- Depletion Mode
- REACH SVHC :
- No SVHC
- Nominal Supply Current :
- 10mA
- Lead Free :
- Lead Free
- Power - Output :
- 5dBm
- Additional Feature :
- LOW NOISE
- Qualification Status :
- Not Qualified
- Contact Plating :
- Gold
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Datasheets
- ATF-36077-STR
ATF-36077-STR Documents
ATF-36077-STR datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Broadcom Limited stock available at
The Broadcom Transistors - FETs, MOSFETs - RF ATF-36077-STR are designed for use in a variety of RF applications, such as amplifiers, mixers, oscillators, and switches. They are also suitable for use in low noise amplifiers, low power amplifiers, and high frequency amplifiers. These transistors are designed to provide high performance and reliability in a wide range of RF applications.
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