ATF-36077-STR
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- Mfr.Part #
- ATF-36077-STR
- Manufacturer
- Broadcom
- Package / Case
- 4-SMD (77 Pack)
- Datasheet
- Download
- Description
- FET RF 3V 12GHZ 77-SMD
- Stock
- 6,486
- In Stock ：
- 6,486
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- Manufacturer :
- Broadcom
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Terminal Position :
- Radial
- Number of Pins :
- 4
- ECCN Code :
- EAR99
- Gain :
- 12dB
- Frequency :
- 12GHz
- Contact Plating :
- Gold
- Current Rating :
- 45mA
- Terminal Form :
- Flat
- Transistor Type :
- pHEMT FET
- Continuous Drain Current (ID) :
- 25mA
- Max Operating Temperature :
- 150°C
- Case Connection :
- SOURCE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Additional Feature :
- LOW NOISE
- Min Operating Temperature :
- -65°C
- Operating Mode :
- Depletion Mode
- Noise Figure :
- 0.5dB
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 3V
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 3V
- Power - Output :
- 5dBm
- Number of Terminations :
- 4
- Drain to Source Voltage (Vdss) :
- 1.5V
- FET Technology :
- HIGH ELECTRON MOBILITY
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Unknown
- REACH SVHC :
- No SVHC
- Voltage - Test :
- 1.5V
- RoHS Status :
- RoHS Compliant
- Published :
- 1999
- Gate to Source Voltage (Vgs) :
- -3V
- Lead Free :
- Lead Free
- Nominal Supply Current :
- 10mA
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- 4-SMD (77 Pack)
- Max Power Dissipation :
- 180mW
- JESD-609 Code :
- e4
- Packaging :
- Bulk
- Qualification Status :
- Not Qualified
- Mount :
- Surface Mount
- Configuration :
- Single
- Datasheets
- ATF-36077-STR
ATF-36077-STR Documents
ATF-36077-STR datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Broadcom Limited stock available at
The Broadcom Transistors - FETs, MOSFETs - RF ATF-36077-STR are designed for use in a variety of RF applications, such as amplifiers, mixers, oscillators, and switches. They are also suitable for use in low noise amplifiers, low power amplifiers, and high frequency amplifiers. These transistors are designed to provide high performance and reliability in a wide range of RF applications.
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