ATF-36077-STR
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- Mfr.Part #
- ATF-36077-STR
- Manufacturer
- Broadcom
- Package / Case
- 4-SMD (77 Pack)
- Datasheet
- Download
- Description
- FET RF 3V 12GHZ 77-SMD
- Stock
- 6,486
- In Stock ：
- 6,486
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- Manufacturer :
- Broadcom
- Product Category :
- Transistors - FETs, MOSFETs - RF
- DS Breakdown Voltage-Min :
- 3V
- Max Operating Temperature :
- 150°C
- Qualification Status :
- Not Qualified
- Number of Pins :
- 4
- Power - Output :
- 5dBm
- Transistor Application :
- AMPLIFIER
- REACH SVHC :
- No SVHC
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- Flat
- Noise Figure :
- 0.5dB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e4
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 1.5V
- Voltage - Test :
- 1.5V
- Gain :
- 12dB
- FET Technology :
- HIGH ELECTRON MOBILITY
- ECCN Code :
- EAR99
- Operating Mode :
- Depletion Mode
- Continuous Drain Current (ID) :
- 25mA
- Reach Compliance Code :
- Unknown
- Packaging :
- Bulk
- Case Connection :
- SOURCE
- Contact Plating :
- Gold
- Published :
- 1999
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Additional Feature :
- LOW NOISE
- Package / Case :
- 4-SMD (77 Pack)
- Voltage - Rated DC :
- 3V
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 12GHz
- Polarity/Channel Type :
- N-Channel
- Lead Free :
- Lead Free
- Transistor Type :
- pHEMT FET
- Max Power Dissipation :
- 180mW
- Number of Terminations :
- 4
- Mount :
- Surface Mount
- Current Rating :
- 45mA
- Min Operating Temperature :
- -65°C
- Terminal Position :
- Radial
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- -3V
- Nominal Supply Current :
- 10mA
- Datasheets
- ATF-36077-STR
ATF-36077-STR Documents
ATF-36077-STR datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Broadcom Limited stock available at
The Broadcom Transistors - FETs, MOSFETs - RF ATF-36077-STR are designed for use in a variety of RF applications, such as amplifiers, mixers, oscillators, and switches. They are also suitable for use in low noise amplifiers, low power amplifiers, and high frequency amplifiers. These transistors are designed to provide high performance and reliability in a wide range of RF applications.
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