ATF-531P8-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Height :

800μm

Gate to Source Voltage (Vgs) :

1V

FET Technology :

HIGH ELECTRON MOBILITY

JEDEC-95 Code :

MO-229

Width :

2.1mm

Termination :

SMD/SMT

Case Connection :

SOURCE

Max Operating Temperature :

150°C

Power - Output :

24.5dBm

Dual Supply Voltage :

4V

Mount :

Surface Mount

REACH SVHC :

No SVHC

Number of Terminations :

8

Gain :

20dB

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

7V

Packaging :

Bulk

Current Rating :

300mA

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Number of Elements :

1

ECCN Code :

EAR99

Number of Pins :

8

Base Part Number :

ATF-531P8

Factory Lead Time :

12 Weeks

Frequency :

2GHz

Power Dissipation :

1W

Min Operating Temperature :

-65°C

Noise Figure :

0.6dB

Length :

2.1mm

Configuration :

Single

Voltage - Rated :

7V

Radiation Hardening :

No

Published :

2008

Nominal Vgs :

300 mV

Continuous Drain Current (ID) :

300mA

Terminal Position :

Dual

Max Power Dissipation :

1W

Polarity/Channel Type :

N-Channel

Transistor Type :

E-pHEMT

RoHS Status :

RoHS Compliant

Nominal Supply Current :

135mA

Drain to Source Voltage (Vdss) :

4V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Package / Case :

8-WFDFN Exposed Pad

Drain Current-Max (Abs) (ID) :

0.3A

Lead Free :

Lead Free