ATF-53189-TR1

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Position :

Single

Factory Lead Time :

6 Weeks

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

260

Transistor Type :

pHEMT FET

Package / Case :

TO-243AA

Terminal Form :

Flat

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

0.3A

Operating Mode :

ENHANCEMENT MODE

Voltage - Test :

4V

Power - Output :

21.7dBm

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Voltage - Rated :

7V

DS Breakdown Voltage-Min :

7V

Current - Test :

135mA

Configuration :

Single

Noise Figure :

0.8dB

Power Dissipation Ambient-Max :

1W

Published :

2005

FET Technology :

HIGH ELECTRON MOBILITY

Case Connection :

SOURCE

Transistor Element Material :

SILICON

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.21.00.75

Number of Elements :

1

Transistor Application :

AMPLIFIER

Gain :

17.2dB

Current Rating (Amps) :

300mA

Frequency :

900MHz

Additional Feature :

LOW NOISE

Operating Temperature (Max) :

150°C

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

2 (1 Year)

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-F3