ATF-53189-TR1

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Finish :

Matte Tin (Sn)

Polarity/Channel Type :

N-Channel

Configuration :

Single

Current - Test :

135mA

Power - Output :

21.7dBm

Surface Mount :

yes

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

2 (1 Year)

ECCN Code :

EAR99

Power Dissipation Ambient-Max :

1W

Published :

2005

FET Technology :

HIGH ELECTRON MOBILITY

Package / Case :

TO-243AA

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Noise Figure :

0.8dB

Number of Terminations :

3

Voltage - Test :

4V

Reach Compliance Code :

Compliant

Voltage - Rated :

7V

DS Breakdown Voltage-Min :

7V

Additional Feature :

LOW NOISE

Operating Temperature (Max) :

150°C

Factory Lead Time :

6 Weeks

Qualification Status :

Not Qualified

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-PSSO-F3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Gain :

17.2dB

Frequency :

900MHz

Operating Mode :

ENHANCEMENT MODE

Current Rating (Amps) :

300mA

Drain Current-Max (Abs) (ID) :

0.3A

Number of Elements :

1

Case Connection :

SOURCE

Terminal Position :

Single

HTS Code :

8541.21.00.75

Transistor Type :

pHEMT FET

Terminal Form :

Flat