ATF-501P8-TR2

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-65°C

Number of Pins :

8

DS Breakdown Voltage-Min :

7V

Current Rating :

1A

Power - Output :

29dBm

Terminal Position :

Dual

ECCN Code :

EAR99

Gain :

15dB

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

NO LEAD

Case Connection :

SOURCE

FET Technology :

HIGH ELECTRON MOBILITY

Drain Current-Max (Abs) (ID) :

1A

Voltage - Rated DC :

4.5V

Package / Case :

8-WFDFN Exposed Pad

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Noise Figure :

1dB

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Number of Terminations :

8

JEDEC-95 Code :

MO-229

Gate to Source Voltage (Vgs) :

800mV

Frequency :

2GHz

Qualification Status :

Not Qualified

Factory Lead Time :

6 Weeks

Current - Test :

280mA

Drain to Source Voltage (Vdss) :

4.5V

Continuous Drain Current (ID) :

1A

Mount :

Surface Mount

Polarity/Channel Type :

N-Channel

Transistor Type :

E-pHEMT

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

3.5W

Published :

2014

Additional Feature :

LOW NOISE

Number of Elements :

1

Configuration :

Single

Max Power Dissipation :

3.5W