APTGT50A120D1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 50A

Collector Emitter Breakdown Voltage :

1.2kV

Input :

Standard

Polarity/Channel Type :

N-Channel

Package / Case :

D1

Turn On Time :

280 ns

Configuration :

Half Bridge

Terminal Form :

UNSPECIFIED

Input Capacitance :

3.6nF

Operating Temperature (Max) :

150°C

Voltage - Collector Emitter Breakdown (Max) :

1200V

NTC Thermistor :

No

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

2.1V

Case Connection :

Isolated

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

270W

Mount :

Chassis Mount

Mounting Type :

Chassis Mount

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position :

UPPER

Current - Collector Cutoff (Max) :

5mA

Turn Off Time-Nom (toff) :

830 ns

JESD-30 Code :

R-XUFM-X7

Input Capacitance (Cies) @ Vce :

3.6nF @ 25V

Number of Terminations :

7

Pbfree Code :

yes

Max Power Dissipation :

270W

IGBT Type :

Trench Field Stop

Transistor Application :

Motor Control

Number of Elements :

2

Max Collector Current :

75A

Pin Count :

7