APT8M100B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

7.8ns

Width :

16.26mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1885pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Voltage - Rated DC :

1kV

Lead Free :

Lead Free

Vgs (Max) :

±30V

Published :

1997

Continuous Drain Current (ID) :

8A

Power Dissipation :

290W

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Factory Lead Time :

23 Weeks

Number of Elements :

1

Turn-Off Delay Time :

29 ns

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Pulsed Drain Current-Max (IDM) :

27A

Current Rating :

8A

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5V @ 1mA

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Configuration :

Single

Turn On Delay Time :

8.5 ns

Pin Count :

3

Fall Time (Typ) :

7.2 ns

Height :

5.31mm

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 4A, 10V

JEDEC-95 Code :

TO-247AB

Pbfree Code :

yes

Package / Case :

TO-247-3

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Drain to Source Voltage (Vdss) :

1000V

Length :

21.46mm

JESD-609 Code :

e1

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

7.3A

Weight :

38.000013g

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Power Dissipation-Max :

290W Tc