APT84M50B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Drain-source On Resistance-Max :

0.065Ohm

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Rise Time :

70ns

Number of Pins :

3

Radiation Hardening :

No

Mounting Type :

Through Hole

Number of Elements :

1

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

22 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Mount :

Through Hole

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

155 ns

Package / Case :

TO-247-3 Variant

Rds On (Max) @ Id, Vgs :

65m Ω @ 42A, 10V

Pin Count :

3

JESD-609 Code :

e3

Turn On Delay Time :

60 ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

84A

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Pbfree Code :

yes

Power Dissipation-Max :

1135W Tc

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

13500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

340nC @ 10V

Lead Free :

Lead Free

Current Rating :

84A

Pulsed Drain Current-Max (IDM) :

270A

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Terminal Position :

Single

Fall Time (Typ) :

50 ns

Voltage - Rated DC :

500V

Terminal Finish :

PURE MATTE TIN